so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 absolute maximum ratings t a =25 5 secs steady state 5 secs steady state drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 0.70 0.66 0.60 0.57 a t a =85 0.50 0.48 0.43 0.41 a pulsed drain current i dm a continuous source current (diode conduction)a i s 0.25 0.23 -0.25 -0.23 a maximum power dissipation* t a =25 0.3 0.27 0.3 0.27 w t a =85 0.16 0.14 0.16 0.14 w operating junction and storage temperature range t j ,t stg *surface mounted on 1" x 1" fr4 board. parameter unit 20 -8 n-channel p-channel symbol 1 -55 to 150 12 8 i d p d thermal resistance ratings t a =25 symbol typical maximum unit t 5sec 360 415 steady state 400 460 maximum junction-to-foot (drain) steady state r thjf 300 350 *surface mounted on 1" x 1" fr4 board. parameter maximum junction-to-ambient* r thja /w pin configuration 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors KI1555DL smd type ic smd type transistors smd type smd type smd type smd type smd type smd type product specification
smd type ic smd type transistors electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d =250 a n-ch 0.6 v ds =v gs ,i d =-250 a p-ch -0.45 v ds =0vv gs = 12v n-ch 100 v ds =0vv gs = 8v p-ch 100 v ds =16v,v gs =0v n-ch 1 v ds =-6.4v,v gs =0v p-ch -1 v ds =16v,v gs =0v,t j =85 n-ch 5 v ds =-6.4v,v gs =0v,t j =85 p-ch -5 v ds 5v,v gs =4.5v n-ch 1.0 v ds -5 v, v gs =-4.5v p-ch -1.0 v gs =4.5v,i d = 0.66a n-ch 0.320 0.385 v gs =-4.5v,i d = -0.57a p-ch 0.510 0.600 v gs =2.5v,i d = 0.40a n-ch 0.560 0.630 v gs =-2.5v,i d = -0.48a p-ch 0.720 0.850 v gs =-1.8v,i d = -0.20a p-ch 1.00 1.200 v ds =10v,i d = 0.66a n-ch 1.5 v ds =-4v,i d = -0.57a p-ch 1.2 i s =0.23a,v gs =0v n-ch 0.8 1.2 i s = -0.23a, v gs = 0 v p-ch -0.8 -1.2 n-channel n-ch 0.8 1.2 v ds =10v,v gs =4.5v,i d = 0.66a p-ch 1.5 2.3 n-ch 0.06 p-channel p-ch 0.17 v ds =-4v,v gs =-4.5v,i d =-0.57a n-ch 0.30 p-ch 0.16 n- channel n-ch 10 20 v dd =10v,r l =20 p-ch 6 12 i d =0.5a,v gen =4.5v,r g =6 n-ch 16 30 p-ch 25 50 p-channel n-ch 10 20 v dd =-4v,r l =8 p-ch 10 20 i d =-0.5a,v gen =-4.5v,r g =6 n-ch 10 20 p-ch 10 20 i f =0.23a,d i /d t =100a/ s n-ch 20 40 i f = -0.23 a, d i /d t =100a/ s p-ch 20 40 * pulse test; pulse width 300 s, duty cycle 2%. fall time turn on time v pc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f forward transconductance* i dss testconditons v na a v gs( th) i gss a ms q gs q gd i d(on) g fs gate threshold voltage gate body leakage zero gate voltage drain current on state drain currenta rise time turn off delay time r ds(on) drain source on state resistance* diode forward voltage* total gate charge gate source charge gate drain charge v sd q g KI1555DL 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type transistors smd type smd type smd type smd type smd type smd type product specification
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